Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum p-GaN cap layer. The GaN evaporation selectivity is demonstrated thin 2 nm AlN barrier Furthermore, regrowth AlGaN a major key to increase maximum drain current in transistors and enables co-integration depletion devices.